The New Evolution of HFI Welder
MOSWELD SiC is the ultimate solid state power supply using Silicon Carbide transistor technology, the highest overall energy efficiency (more than 90%) in the market allowing to decrease the production costs.
MOSFET transistors with SiC substrate allows increased efficiency and reduced maintenance by eliminating a large number of semiconductors, firing and protection circuits as well as interconnection wiring and water cooling requirements.
Silicon Carbide SiC transistor technology allows for higher capacity device utilization. Larger capacity reduces the quantity of devices required over traditional Si transistors thus, increasing reliability and electrical efficiency. In the end, this simplistic design gives advantages over traditional complex Si transistor designs in lower overall operational cost.
An optimized control is adopted to limit the sensitivity to short circuits, minimizing downtime and also protecting the system. The galvanic insulation is provided by means of a transformer placed between an inverter and an oscillator. Auto-tuning for coil adjustment and intrinsic load adaptation features are implemented for easy welder usage. The three-axis adjusting table is integrated in the welding head. A single cabinet layout is adopted for the entire range up to 1000 kW.
ENERGY EFFICIENT: reduced energy cost by drastic reduction in transistors using the SiC technology
Learn more at Saet Emmedi
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